Innovative Research Award
Duc Hoan Tran is a researcher affiliated with IRT Saint Exupery, France, whose research profile includes work in semiconductor technologies and high-frequency thermal behavior of GaN transistors. His research activity is represented in indexed scholarly records and includes work relevant to power electronic devices and inverter and rectifier applications. [1] [2]
Abstract
Duchoan Tran is a France-based researcher associated with IRT Saint Exupery whose scholarly profile is centered on semiconductor research. His documented work includes investigation of high-frequency temperature variation in GaN transistors, with relevance to inverter and rectifier applications. The profile demonstrates sustained research activity and indexed scholarly output. [1] [2]
Keywords
Semiconductor; GaN transistors; power electronics; high-frequency temperature variation; inverter applications; rectifier applications; thermal characterization; electronic devices.
Introduction
Semiconductor research is fundamental to the development of efficient electronic and power-conversion systems. Duchoan Tran’s documented research addresses thermal behavior in high-frequency GaN transistor operation, particularly for inverter and rectifier applications. This work connects semiconductor device characterization with practical power-electronic requirements and contributes to understanding temperature variation under demanding operating conditions. [1]
Research Profile
Tran’s research profile is associated with semiconductor technologies and the characterization of GaN-based electronic devices. The Scopus record identifies the researcher through Author ID 57200634107 and documents an indexed publication record comprising 10 documents, 68 citations, and an h-index of 5. These indicators provide a bibliographic overview of the documented research activity. [2]
Research Contributions
A notable contribution is the modeling and measurement of high-frequency temperature variation in GaN transistors intended for inverter and rectifier applications. The research combines device-level thermal investigation with application-oriented power-electronic contexts, supporting improved understanding of temperature behavior during high-frequency operation. Such characterization is relevant to semiconductor reliability, thermal management, and system design. [1]
Publications
The documented publication record includes research on the modeling and measurement of high-frequency temperature variation in GaN transistors. Published through an Elsevier-hosted ScienceDirect record, this work focuses on semiconductor thermal behavior in inverter and rectifier applications. The publication provides direct evidence of Tran’s engagement with experimentally and analytically oriented semiconductor research. [1]
Research Impact
Tran’s indexed research record reports 68 citations and an h-index of 5 across 10 documents, indicating that the documented publications have received measurable scholarly attention. His work on GaN transistor temperature behavior has potential relevance to researchers and engineers working on power semiconductors, high-frequency switching, thermal management, and advanced inverter and rectifier technologies. [2]
Award Suitability
Based on the available publication and bibliographic evidence, Duchoan Tran demonstrates a research profile aligned with the Innovative Research Award. His work addresses a technically relevant semiconductor problem involving high-frequency GaN transistor operation and temperature variation, while his indexed record provides evidence of continuing scholarly activity. The recognition is therefore consistent with his documented research specialization. [1] [2]
Conclusion
Duchoan Tran’s documented research demonstrates focused engagement with semiconductor technology, particularly the thermal characterization of GaN transistors used in power-electronic applications. The combination of publication activity, citation evidence, and a defined research subject provides a credible basis for academic recognition through the Innovative Research Award. [1] [2]
External Links
References
- Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications. (2026). Measurement. Elsevier.
https://www.sciencedirect.com/science/article/abs/pii/S002627142600082X
- Elsevier. (n.d.). Scopus author details: Duchoan Tran, Author ID 57200634107. Scopus.
https://www.scopus.com/pages/authors/57200634107